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SSM9930M Datasheet

  • SSM9930M

  • DUAL N-AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

  • 8頁

  • ETC

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SSM9930M
DUAL N- AND DUAL P-CHANNEL ENHANCEMENT-MODE
POWER MOSFETS
Simple drive requirement
Low on-resistance
Full-bridge applications, such as
LCD monitor inverter
SO-8
P1S/P2S
P1G
N2G
N1S/N2S
N1D/P1D
N1G
P2G
N2D/P2D
N-CH
BV
DSS
R
DS(ON)
I
D
30V
33m鈩?/div>
6.3A
-30V
55m鈩?/div>
-5.1A
P-CH
BV
DSS
R
DS(ON)
I
D
P1S
P1G
P2S
Description
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
The SSM9930M is in the SO-8 package, which is widely preferred for
commercial and industrial surface mount applications, and is well suited
for applications such as low-voltage inverters and motor drives.
N1G
P2G
P1N1D
P2N2D
N2G
N1S
N2S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
=25擄C
I
D
@ T
A
=70擄C
I
DM
P
D
@ T
A
=25擄C
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Rating
N-channel
30
鹵 25
6.3
4.2
20
2.0
0.016
-55 to 150
-55 to 150
P-channel
-30
鹵25
-5.1
-3.4
-20
Units
V
V
A
A
A
W
W/擄C
擄C
擄C
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
62.5
Unit
擄C/W
10/21/2004 Rev.1.01
www.SiliconStandard.com
1 of 8

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    DUAL N-AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
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  • 英文版
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