鈥?/div>
1.5 V drive
Suitable for high-density mounting due to compact package
Low on-resistance : R
on
= 228 m鈩?(max) (@ V
GS
= -2.5 V)
: R
on
= 350 m鈩?(max) (@ V
GS
= -1.8 V)
: R
on
= 555 m鈩?(max) (@ V
GS
= -1.5 V)
Unit : mm
2.1鹵0.1
1.7鹵0.1
0.65 0.65
+0.1
0.3-0.05
V
渭A
渭A
V
S
m惟
ns
V
2.0鹵0.1
1.3鹵0.1
1
2
3
6
5
4
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
-20
鹵
8
-1.2
-2.4
500
150
鈭?5
~ 150
Unit
V
A
mW
擄C
擄C
V
0.7鹵0.05
1.Sorce1
2.Gate1
3.Drain2
4.Source 2
5.Gate2
6.Drain1
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board.
2
(25.4 mm
脳
25.4 mm
脳
1.6 t, Cu Pad: 645 mm )
Note:
UF6
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-2T1B
Weight: 7.0 mg (typ.)
Electrical Characteristics
(Ta
=
25擄C)
Characteristics
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Total gate charge
Gate-Source charge
Gate-Drain charge
Drain-Source forward voltage
Turn-on time
Turn-off time
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
|Y
fs
|
R
DS (ON)
C
iss
C
oss
C
rss
t
on
t
off
Q
g
Q
gs
Q
gd
V
DSF
Test Condition
I
D
= 鈭?
mA, V
GS
=
0
I
D
= 鈭?
mA, V
GS
=
+8 V
V
DS
=
鈭?0
V, V
GS
= 0
V
GS
= 鹵
8 V, V
DS
=
0
V
DS
= 鈭?
V, I
D
= 鈭?
mA
V
DS
=
-3 V, I
D
=
-0.6 A
I
D
=
-0.6 A, V
GS
=
-2.5 V
I
D
=
-0.6 A, V
GS
=
-1.8 V
I
D
=
-0.1 A, V
GS
=
-1.5 V
V
DS
= 鈭?0
V, V
GS
=
0
f
=
1 MHz
V
DD
= 鈭?0
V, I
D
= 鈭?.6
A
V
GS
=
0 ~
鈭?.5
V, R
G
=
4.7
惟
V
DS
= 鈭?6
V, I
DS
=
-1.2 A,
V
GS
= 鈭?/div>
4 V
I
D
=
1.2 A, V
GS
=
0
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
Min
鈭?0
鈭?2
鈳?/div>
鈳?/div>
鈭?.3
1.7
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
Typ.
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
3.4
162
212
249
331
48
39
19
18
7.7
4.9
2.8
0.8
Max
鈳?/div>
鈳?/div>
鈭?0
鹵
1
鈭?.0
鈳?/div>
228
350
555
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
1.2
nC
pF
Unit
Note 2:
Pulse test
1
2007-11-01
+0.06
0.16-0.05
SSM6P54TU相關(guān)型號(hào)PDF文件下載
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