鈥?/div>
Suitable for high-density mounting due to compact package
High drain-source voltage
High speed switching
Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
50
鹵7
100
200
200
150
鈭?5~150
Unit
V
V
mA
mW
擄C
擄C
Drain power dissipation (Ta = 25擄C)
Channel temperature
Storage temperature range
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Total rating,Mounted on FR4 board
2
(25.4 mm 脳 25.4 mm 脳 1.6 t, Cu Pad: 0.32 mm 脳 6)
Note:
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-70 (6pin)
2-2J1C
Weight: 6.8 mg (typ.)
0.4 mm
0.8 mm
Marking
6
5
4
Equivalent Circuit
6
5
4
DM
1
2
3
1
Q1
Q2
2
3
This transistor is a electrostatic sensitive device. Please handle with caution.
1
2007-11-01
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