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SSM6N16FE Datasheet

  • SSM6N16FE

  • High Speed Switching Applications Analog Switching Applicati...

  • 144.63KB

  • 5頁

  • TOSHIBA

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SSM6N16FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N16FE
High Speed Switching Applications
Analog Switching Applications
路
路
Suitable for high-density mounting due to compact package
Low on resistance: R
on
= 3.0
鈩?/div>
(max) (@V
GS
= 4 V)
: R
on
= 4.0
鈩?/div>
(max) (@V
GS
= 2.5 V)
: R
on
=
15 鈩?/div>
(max) (@V
GS
=
1.5
V)
Unit: mm
Maximum Ratings
(Ta = 25擄C) (Q1, Q2 Common)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note)
T
ch
T
stg
Rating
20
鹵10
100
200
150
150
-55~150
Unit
V
V
mA
mW
擄C
擄C
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-2N1D
Note: Total rating, mounted on FR4 board
2
(25.4 mm
麓
25.4 mm
麓
1.6 t, Cu Pad: 0.135 mm
麓
6)
Marking
6
5
4
0.45 mm
0.3 mm
Equivalent Circuit
6
5
4
DS
1
2
3
1
Q1
Q2
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2001-12-18

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