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SSM6N16FE_07 Datasheet

  • SSM6N16FE_07

  • High Speed Switching Applications

  • 156.42KB

  • 5頁

  • TOSHIBA

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SSM6N16FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N16FE
High Speed Switching Applications
Analog Switching Applications
鈥?/div>
鈥?/div>
Suitable for high-density mounting due to compact package
Low on resistance: R
on
= 3.0
鈩?/div>
(max) (@V
GS
= 4 V)
: R
on
= 4.0
鈩?/div>
(max) (@V
GS
= 2.5 V)
: R
on
= 15
鈩?/div>
(max) (@V
GS
= 1.5 V)
Unit: mm
(Q1, Q2 Common)
Drain-Source voltage
Gate-Source voltage
Drain current
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Symbol
V
DS
V
GSS
DC
Pulse
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
20
鹵10
100
200
150
150
鈭?5~150
Unit
V
V
mA
mW
擄C
擄C
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature range
Using continuously under heavy loads (e.g. the application of
JEDEC
鈥?/div>
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
鈥?/div>
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2N1D
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
(25.4 mm
脳
25.4 mm
脳
1.6 t, Cu Pad: 0.135 mm
2
脳
6)
0.3 mm
Note:
Marking
6
5
4
0.45 mm
Equivalent Circuit
6
5
4
DS
1
2
3
1
Q1
Q2
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01

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