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SSM6N09FU Datasheet

  • SSM6N09FU

  • High Speed Switching Applications

  • 149.76KB

  • 5頁

  • TOSHIBA

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SSM6N09FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N09FU
High Speed Switching Applications
Unit: mm
Small package
Low Drain-Source ON resistance.
: R
on
= 0.7
鈩?/div>
(max) (@V
GS
=
10
V)
: R
on
=
1.2 鈩?/div>
(max) (@V
GS
= 4 V)
路
路
Maximum Ratings
(Ta
=
25擄C) (Q1, Q2 Common)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note1)
T
ch
T
stg
Rating
30
鹵20
400
800
300
150
-55~150
Unit
V
V
mA
mW
擄C
擄C
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-2J1C
Note1: Total rating, mounted on FR4 board
2
(25.4 mm
麓
25.4 mm
麓
1.6 t, Cu Pad: 0.32 mm
麓
6) Figure 1.
Weight: 6.8 mg (typ.)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2003-02-19

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