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SSM6N04FU_07 Datasheet

  • SSM6N04FU_07

  • High Speed Switch Applications

  • 616.33KB

  • 5頁

  • TOSHIBA

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SSM6N04FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N04FU
High Speed Switch Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
With built-in gate-source resistor: R
GS
= 1 M鈩?(typ.)
2.5 V gate drive
Low gate threshold voltage: V
th
= 0.7~1.3 V
Small package
Unit: mm
(Q1, Q2 common)
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
GSS
I
D
P
D
(Note 1)
T
ch
T
stg
Rating
20
10
100
200
150
鈭?5~150
Unit
V
V
mA
mW
擄C
擄C
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Total rating
Note:
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-2J1C
Weight: 6.8 mg (typ.)
Marking
Pin Assignment
(top view)
(Q1, Q2 common)
Equivalent Circuit
1
2007-11-01

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