鈥?/div>
2-2T1B
(Ta = 25 擄C)
Absolute Maximum Ratings
(Q1 , Q2 Common)
Characteristic
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
P
D (Note 1)
T
ch
T
stg
Rating
500
150
鈭?5
to 150
Unit
mW
擄C
擄C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (total dissipation)
2
(25.4 mm
脳
25.4 mm
脳
1.6 mm, Cu Pad: 645 mm )
Marking
6
5
4
Equivalent Circuit
(top view)
6
5
4
KV
1
2
3
1
Q1
Q2
2
3
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
1
2007-11-01
+0.06
0.16-0.05