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SSM6L11TU Datasheet

  • SSM6L11TU

  • High Speed Switching Applications

  • 9頁

  • TOSHIBA

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SSM6L11TU
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
SSM6L11TU
High Speed Switching Applications
鈥?/div>
鈥?/div>
Optimum for high-density mounting in small packages
Low on-resistance
Q1:
R
on
= 395m鈩?(max) (@V
GS
= 1.8 V)
Q2:
R
on
= 430m鈩?(max) (@V
GS
= -2.5 V)
2.1鹵0.1
1.7鹵0.1
0.65 0.65
+0.1
0.3-0.05
Unit
Unit: mm
Q1 Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
Rating
20
鹵
12
0.5
1.5
2.0鹵0.1
1.3鹵0.1
V
V
A
1
2
3
6
5
4
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
Rating
-20
鹵
12
-0.5
-1.5
Unit
V
V
A
0.7鹵0.05
Q2 Absolute Maximum Ratings
(Ta = 25擄C)
UF6
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
鈥?/div>
鈥?/div>
2-2T1B
(Ta = 25擄C)
Absolute Maximum Ratings
(Q1,Q2 Common)
Characteristics
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
P
D
(Note 1)
JEDEC
Unit
mW
擄C
擄C
Rating
500
150
鈭?5~150
JEITA
TOSHIBA
Weight: 7.0 mg (typ.)
T
ch
T
stg
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (total dissipation)
2
(25.4 mm
脳
25.4 mm
脳
1.6 t, Cu Pad: 645 mm )
Note:
Marking
6
5
4
Equivalent Circuit
(top view)
6
5
4
K8
1
2
3
1
Q1
Q2
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01
+0.06
0.16-0.05

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