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SSM6K30FE Datasheet

  • SSM6K30FE

  • Field Effect Transistor Silicon P Channel MOS Type (バ-MOSザ...

  • 6頁

  • TOSHIBA

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SSM6K30FE
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (螤-MOS鈪?
SSM6K30FE
鈼?/div>
High speed switching
鈼?/div>
DC-DC Converter
鈥?/div>
鈥?/div>
鈥?/div>
Small package
Low R
DS (ON)
High speed switching
: R
on
= 210 m鈩?(max) (@V
GS
= 10 V)
: R
on
= 420 m鈩?(max) (@V
GS
= 4 V)
: t
on
= 19 ns (typ)
: t
off
= 10 ns (typ)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C) MOSFET
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
20
鹵20
1.2
2.4
500
150
鈭?5~150
Unit
V
V
A
1,2,5,6 : Drain
3
: Gate
4
: Source
JEDEC
mW
擄C
擄C
鈥?/div>
鈥?/div>
2-2N1A
JEITA
TOSHIBA
Note:
Weight: 3 mg (typ.)
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm
脳
25.4 mm
脳
1.6 t, Cu pad: 645 mm
2
)
Marking
6
5
4
Equivalent Circuit
(top view)
6
5
4
KA
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against static electricity. Operators should wear anti-static clothing, and containers
and other objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01

SSM6K30FE 產(chǎn)品屬性

  • Toshiba

  • MOSFET

  • P-Channel

  • 20 V

  • +/- 20 V

  • 1.2 A

  • Single Quad Drain

  • + 150 C

  • SMD/SMT

  • ES-6

  • - 55 C

  • 500 mW

  • 8000

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