鈥?/div>
Suitable for high-density mounting due to compact package
Low on resistance:
R
on
= 170 m鈩?(max) (@V
GS
= 4.0 V)
R
on
= 230 m鈩?(max) (@V
GS
= 2.5 V)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
20
鹵12
1.4
5.6
500
150
鈭?5~150
Unit
V
V
A
mW
擄C
擄C
1,2,5,6 : Drain
3
: Gate
4
: Source
JEDEC
JEITA
TOSHIBA
-
-
2-2N1A
Note:
Using continuously under heavy loads (e.g. the application of
Weight: 3 mg (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
2
(25.4 mm
脳
25.4 mm
脳
1.6 t, Cu Pad: 645 mm )
Marking
6
5
4
Equivalent Circuit (Top View)
6
5
4
KD
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01