鈥?/div>
1.5 V drive
Low ON-resistance:
R
on
= 153 m鈩?(max) (@V
GS
= 1.5V)
R
on
= 106 m鈩?(max) (@V
GS
= 1.8V)
R
on
= 76 m鈩?(max) (@V
GS
= 2.5V)
R
on
= 61 m鈩?(max) (@V
GS
= 4.0V)
Unit: mm
Absolute Maximum Ratings (Ta = 25藲C)
Characteristic
Drain鈥搒ource voltage
Gate鈥搒ource voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
20
鹵
10
2.8
5.6
500
150
鈭?5
to 150
Unit
V
V
A
mW
擄C
擄C
ES6
1, 2, 5, 6 : Drain
3
4
: Gate
: Source
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
2
(25.4 mm
脳
25.4 mm
脳
1.6 t, Cu Pad: 645 mm )
Note:
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-2N1A
Weight: 3 mg (typ.)
Electrical Characteristics
(Ta
=
25擄C)
Characteristic
Drain鈥搒ource breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
鈴怸
fs
鈴?/div>
R
DS (ON)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
on
t
off
V
DSF
V
DS
= 10 V, I
D
= 2.8 A
V
GS
= 4 V
V
DD
=
10 V, I
D
=
2 A,
V
GS
=
0 to 2.5 V, R
G
=
4.7
惟
I
D
= 鈭?/div>
2.8 A, V
GS
=
0 V
(Note2)
Test Condition
I
D
=
1 mA, V
GS
=
0 V
I
D
=
1 mA, V
GS
=
鈥?0 V
V
DS
=
20 V, V
GS
=
0 V
V
GS
= 鹵
10 V, V
DS
=
0 V
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
3 V, I
D
=
2.0 A
I
D
=
2.0 A, V
GS
=
4.0 V
I
D
=
2.0 A, V
GS
=
2.5 V
I
D
=
1.0 A, V
GS
=
1.8 V
I
D
=
0.5 A, V
GS
=
1.5 V
Min
20
12
鈳?/div>
鈳?/div>
0.35
5.3
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
Typ.
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
10.5
49
59
73
88
400
68
60
5.9
4.1
1.8
14
15
鈥?0.85
Max
鈳?/div>
鈳?/div>
1
鹵1
1.0
鈳?/div>
61
76
106
153
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈥?1.2
nC
Unit
V
V
渭A
渭A
V
S
Drain鈥搒ource ON-resistance
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
m惟
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate鈭扴ource Charge
Gate鈭扗rain Charge
Turn-on time
Switching time
Turn-off time
Drain鈥搒ource forward voltage
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
pF
ns
V
Note 2: Pulse test
1
2007-11-01
SSM6K203FE相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Analog Addressable Control Panel
GAMEWELL-FCI
-
英文版
TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 20V V(BR)DS...
ETC
-
英文版
Load Switch Applications
TOSHIBA
-
英文版
Load Switch Applications
TOSHIBA [T...
-
英文版
Power Management Switch High Speed Switching Applications
TOSHIBA
-
英文版
Power Management Switch High Speed Switching Applications
TOSHIBA [T...
-
英文版
TOSHIBA Transistor Silicon P Channel MOS Type
TOSHIBA
-
英文版
TOSHIBA Transistor Silicon P Channel MOS Type
TOSHIBA [T...
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...
TOSHIBA
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...
TOSHIBA [T...
-
英文版
High Current Switching Applications
TOSHIBA
-
英文版
High Current Switching Applications
TOSHIBA
-
英文版
High Speed Switching Applications
TOSHIBA
-
英文版
High Speed Switching Applications
TOSHIBA
-
英文版
High Current Switching Applications
TOSHIBA
-
英文版
High Current Switching Applications
TOSHIBA
-
英文版
High-Speed Switching Applications
TOSHIBA
-
英文版
High Speed Switching Applications
TOSHIBA
-
英文版
High Speed Switching Applications
TOSHIBA [T...
-
英文版
DC-DC Converters High Speed Switching Applications
TOSHIBA
1
2
3
4
5
6
7
