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SSM6K201FE Datasheet

  • SSM6K201FE

  • Power Management Switch Applications High Speed Switching Ap...

  • 5頁

  • TOSHIBA

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SSM6K201FE
Tentative
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K201FE
Power Management Switch Applications
High Speed Switching Applications
鈥?/div>
鈥?/div>
1.8 V drive
Low ON-resistance:
R
on
= 186 m鈩?(max) (@V
GS
= 1.8V)
R
on
= 119 m鈩?(max) (@V
GS
= 2.5V)
R
on
=
91 m鈩?(max) (@V
GS
= 4.0V)
Unit: mm
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristic
Drain鈥搒ource voltage
Gate鈥搒ource voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
20
鹵
12
2.3
4.6
500
150
鈭?5~150
Unit
V
V
A
ES6
W
擄C
擄C
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-2N1A
Note 1: Mounted on an FR4 board.
(25.4 mm
脳
25.4 mm
脳
1.6 t, Cu Pad: 645 mm
2
)
Weight: 3 mg (typ.)
Electrical Characteristics
(Ta = 25擄C)
Characteristic
Drain鈥搒ource breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
鈴怸
fs
鈴?/div>
Test Condition
I
D
=
1 mA, V
GS
=
0
I
D
=
1 mA, V
GS
=
鈥?2 V
V
DS
=
20 V, V
GS
=
0
V
GS
= 鹵
12 V, V
DS
=
0
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
3 V, I
D
=
1.0 A
I
D
=
1.0 A, V
GS
=
4.0 V
Drain鈥搒ource ON-resistance
R
DS (ON)
I
D
=
0.5 A, V
GS
=
2.5 V
I
D
=
0.2 A, V
GS
=
1.8 V
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
C
iss
C
oss
C
rss
t
on
t
off
V
DSF
(Note2)
(Note2)
(Note2)
(Note2)
Min
20
10
鈳?/div>
鈳?/div>
0.4
2.8
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
(Note2)
鈳?/div>
Typ.
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
5.5
71
91
121
220
51
42
12
10
鈥?0.85
Max
鈳?/div>
鈳?/div>
1
鹵1
1.0
鈳?/div>
91
119
186
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈥?1.20
pF
pF
pF
ns
V
m鈩?/div>
Unit
V
V
碌A(chǔ)
碌A(chǔ)
V
S
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DD
=
10 V, I
D
=
2.0 A,
V
GS
=
0 to 2.5 V, R
G
=
4.7
鈩?/div>
I
D
= 鈭?/div>
2.3 A, V
GS
=
0 V
Drain鈥搒ource forward voltage
Note2: Pulse test
1
2006-04-25

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