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SSM6K08FU Datasheet

  • SSM6K08FU

  • CategoryTOSHIBA Field Effect Transistor Silicon N Channel MO...

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  • TOSHIBA

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SSM6K08FU
CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category
SSM6K08FU
High Speed Switching Applications
路
路
路
Small package
Low on resistance:
R
on
= 105 m鈩?(max) (@V
GS
= 4 V)
R
on
= 140 m鈩?(max) (@V
GS
= 2.5 V)
High-speed switching: t
on
= 16 ns (typ.)
t
off
= 15 ns (typ.)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note1)
Rating
20
鹵12
1.6
3.2
300
150
-55~150
Unit
V
V
A
mW
擄C
擄C
T
ch
T
stg
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-2J1D
Note1: Mounted on FR4 board.
2
(25.4 mm
麓
25.4 mm
麓
1.6 t, Cu Pad: 0.32 mm
麓
6)
Figure 1.
Weight: 6.8 mg (typ.)
Marking
Circuit
(top view)
6
5
4
Equivalent
6
5
4
KDC
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2002-01-24

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