鈳?/div>
5.4
95
122
137
568
75
67
29
39
10.6
7.4
3.3
0.8
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
2
(25.4 mm
脳
25.4 mm
脳
1.6 t, Cu Pad: 645 mm )
Note:
Electrical Characteristics
(Ta
=
25擄C)
Characteristics
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Total gate charge
Gate-Source charge
Gate-Drain charge
Drain-Source forward voltage
Turn-on time
Turn-off time
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
|Y
fs
|
R
DS (ON)
C
iss
C
oss
C
rss
t
on
t
off
Q
g
Q
gs
Q
gd
V
DSF
Test Condition
I
D
= 鈭?
mA, V
GS
=
0
I
D
= 鈭?
mA, V
GS
=
+8 V
V
DS
=
鈭?0
V, V
GS
= 0
V
GS
= 鹵
8 V, V
DS
=
0
V
DS
= 鈭?
V, I
D
= 鈭?
mA
V
DS
= 鈭?
V, I
D
= 鈭?.9
A
I
D
= 鈭?.0
A, V
GS
= 鈭?.5
V
I
D
= 鈭?.0
A, V
GS
= 鈭?.8
V
I
D
= 鈭?.1
A, V
GS
= 鈭?.5
V
V
DS
= 鈭?0
V, V
GS
=
0
f
=
1 MHz
V
DD
= 鈭?0
V, I
D
= 鈭?.9
A
V
GS
=
0 ~
鈭?.5
V, R
G
=
4.7
惟
V
DS
= 鈭?6
V, I
DS
=
-1.8 A,
V
GS
= 鈭?/div>
4 V
I
D
=
1.8 A, V
GS
=
0
Max
鈳?/div>
鈳?/div>
鈭?0
鹵1
鈭?.0
鈳?/div>
136
204
364
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
1.2
V
nC
ns
pF
m惟
Unit
V
渭A
渭A
V
S
Note 2: Pulse test
0.5
1
2007-11-01
SSM6J53FE 產(chǎn)品屬性
Toshiba
MOSFET
P-Channel
20 V
+/- 8 V
1.8 A
Single Quad Drain
+ 150 C
SMD/SMT
ES-6
- 55 C
500 mW
8000
SSM6J53FE相關(guān)型號PDF文件下載
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