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SSM6J23FE Datasheet

  • SSM6J23FE

  • High Current Switching Applications

  • 6頁

  • TOSHIBA

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SSM6J23FE
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (U-MOS鈪?
SSM6J23FE
High Current Switching Applications
DC-DC Converter
鈥?/div>
鈥?/div>
Suitable for high-density mounting due to compact package
Low on-resistance:
R
on
= 160 m鈩?(max) (@V
GS
= -4.0 V)
R
on
= 210 m鈩?(max) (@V
GS
= -2.5 V)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
-12
鹵8
-1.2
-4.8
500
150
鈭?5~150
Unit
V
V
A
mW
擄C
擄C
1,2,5,6 : Drain
3
: Gate
4
: Source
JEDEC
JEITA
TOSHIBA
-
-
2-2N1A
Note:
Using continuously under heavy loads (e.g. the application of
Weight: 3 mg (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
2
(25.4 mm
25.4 mm
1.6 t, Cu Pad: 645 mm )
Marking
6
5
4
Equivalent Circuit
6
5
4
KE
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic discharge. Operators should wear anti-static clothing and use containers and
other objects that are made of anti-static materials.
1
2007-11-01

SSM6J23FE 產(chǎn)品屬性

  • Toshiba

  • MOSFET

  • P-Channel

  • 12 V

  • +/- 8 V

  • 1.2 A

  • Single Quad Drain

  • + 150 C

  • SMD/SMT

  • ES-6

  • - 55 C

  • 500 mW

  • 8000

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