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SSM6J08FU Datasheet

  • SSM6J08FU

  • TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...

  • 6頁

  • TOSHIBA

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SSM6J08FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM6J08FU
Power Management Switch
DC-DC Converter
路
路
路
Small Package
Low on Resistance : R
on
= 0.18
鈩?/div>
(max) (@V
GS
=
鈭?
V)
: R
on
= 0.26
鈩?/div>
(max) (@V
GS
=
鈭?.5
V)
Low Gate Threshold Voltage
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
(Note 2)
P
D
(Note 1)
T
ch
T
stg
Rating
-20
鹵12
-1.3
-2.6
300
150
-55~150
Unit
V
V
A
mW
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-2J1D
Note1:
Note2:
Mounted on FR4 board
2
(25.4 mm
麓
25.4 mm
麓
1.6 t, Cu Pad: 0.32 mm
麓
6) Fig: 1.
The pulse width limited by max channel temperature.
Weight: 6.8 mg (typ.)
Marking
Equivalent Circuit
Fig 1: 25.4 mm
麓
25.4 mm
麓
1.6 t,
Cu Pad: 0.32 mm
2
麓
6
6
5
4
6
5
4
0.4 mm
0.8 mm
KDD
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
1
2003-02-19

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