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SSM6J07FU_07 Datasheet

  • SSM6J07FU_07

  • Power Management Switch

  • 5頁

  • TOSHIBA

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SSM6J07FU
TOSHIBA Transistor
Silicon P Channel MOS Type
SSM6J07FU
Power Management Switch
High Speed Switching Applications
鈥?/div>
鈥?/div>
Small package
Low on resistance
: R
on
= 450 m鈩?(max) (V
GS
=
鈭?0
V)
: R
on
= 800 m鈩?(max) (V
GS
=
鈭?
V)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
鈭?0
鹵20
鈭?.8
鈭?.6
300
150
鈭?5~150
Unit
V
V
A
mW
擄C
擄C
JEDEC
鈥?/div>
Note:
JEITA
鈥?/div>
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-2J1D
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 6.8 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
2
(25.4 mm
脳
25.4 mm
脳
1.6 t, Cu Pad: 0.32 mm
脳
6)
Marking
Equivalent Circuit
(top view)
6
Figure 1:
25.4 mm
脳
25.4 mm
脳
1.6 t,
Cu Pad: 0.32 mm
2
脳
6
6
5
4
5
4
0.4 mm
0.8 mm
KDF
1
2
3
1
2
3
1
2007-11-01

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