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SSM6J06FU Datasheet

  • SSM6J06FU

  • Power Management Switch High Speed Switching Applications

  • 6頁(yè)

  • TOSHIBA

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SSM6J06FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6J06FU
Power Management Switch
High Speed Switching Applications
路
路
路
Small package
Low on resistance : Ron = 0.5
鈩?/div>
max (V
GS
=
鈭?
V)
: Ron = 0.7
鈩?/div>
max (V
GS
=
鈭?.5
V)
Low gate threshold voltage
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
-20
鹵12
-650
-1300
300
150
-55~150
Unit
V
V
mA
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature range
mW
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-2J1D
Note 1: Mounted on FR4 board.
(25.4 mm
麓
25.4 mm
麓
1.6 t, Cu pad: 0.32 mm
麓
6) Figure 1.
2
Weight: 6.8 mg (typ.)
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2003-03-28

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