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SSM5G01TU Datasheet

  • SSM5G01TU

  • DC-DC Converter for DSCs and Camcorders

  • 202.66KB

  • 9頁

  • TOSHIBA

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SSM5G01TU
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode
SSM5G01TU
DC-DC Converter for DSCs and Camcorders
路
路
Co-packaged Pch MOSFET and Schottky Diode.
Low R
DS (ON)
and Low V
F
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
(Note 2)
P
D
(Note 1)
t
=
10s
T
ch
Rating
-30
鹵20
-1.0
-2.0
0.5
0.8
150
Unit
V
V
A
Channel temperature
Channel temperature
W
擄C
UFV
JEDEC
鈥?/div>
鈥?/div>
2-2R1A
Maximum Ratings
(Ta
=
25擄C) SCHOTTKY DIODE
Characteristics
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Symbol
V
RM
V
R
I
O
I
FSM
T
j
Rating
25
20
0.5
2 (50 Hz)
125
Unit
V
V
A
A
擄C
JEITA
TOSHIBA
Weight: 7 mg (typ.)
Maximum Ratings
(Ta
=
25擄C) MOSFET, DIODE COMMON
Characteristics
Storage temperature
Operating temperature
Symbol
T
stg
T
opr
(Note 3)
Rating
-55~125
-40~100
Unit
擄C
擄C
Note 1: Mounted on FR4 board
2
(25.4 mm
麓
25.4 mm
麓
1.6 t, Cu pad: 645 mm )
Note 2: The pulse width limited by max channel temperature.
Note 3: Operating temperature limited by max channel temperature and max junction temperature.
1
2001-12-05

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