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SSM5G01TU_07 Datasheet

  • SSM5G01TU_07

  • DC-DC Converter for DSCs and Camcorders

  • 9頁

  • TOSHIBA

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SSM5G01TU
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode
SSM5G01TU
DC-DC Converter for DSCs and Camcorders
鈥?/div>
鈥?/div>
Co-packaged Pch MOSFET and Schottky Diode.
Low R
DS (ON)
and Low V
F
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
(Note 2)
P
D
(Note 1)
t
=
10s
T
ch
Rating
鈭?0
鹵20
鈭?.0
鈭?.0
0.5
0.8
150
Unit
V
V
A
Channel temperature
Channel temperature
W
擄C
UFV
DIODE
Absolute Maximum Ratings
(Ta
=
25擄C) SCHOTTKY
Characteristics
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Symbol
V
RM
V
R
I
O
I
FSM
T
j
Rating
25
20
0.5
2 (50 Hz)
125
Unit
V
V
A
A
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-2R1A
Weight: 7 mg (typ.)
Absolute Maximum Ratings
(Ta
=
25擄C) MOSFET, DIODE COMMON
Characteristics
Storage temperature
Operating temperature
Symbol
T
stg
T
opr
(Note 3)
Rating
鈭?5~125
鈭?0~100
Unit
擄C
擄C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm
脳
25.4 mm
脳
1.6 t, Cu pad: 645 mm
2
)
Note 2: The pulse width limited by max channel temperature.
Note 3: Operating temperature limited by max channel temperature and max junction temperature.
1
2007-11-01

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