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SSM4K27CT Datasheet

  • SSM4K27CT

  • Switching Applications

  • 5頁

  • TOSHIBA

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SSM4K27CT
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (U-MOS鈪?
SSM4K27CT
鈼?/div>
Switching Applications
鈥?/div>
鈥?/div>
Suitable for high-density mounting due to compact package
Low on-resistance:
R
on
= 205 m鈩?(max) (@V
GS
= 4.0 V)
R
on
= 260 m鈩?(max) (@V
GS
= 2.5 V)
1.2鹵0.05
0.75
Unit: mm
Top view
0.05鹵0.04
0.8鹵0.05
0.5
0.2鹵0.02
0.3鹵0.02
R
on
= 390 m鈩?(max) (@V
GS
= 1.8 V)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
20
鹵12
0.5
1.0
400
150
鈭?5~150
Unit
V
V
A
mW
擄C
擄C
Side view
+0.02
0.38 -0.03
CST4
1 :Gate 2:Source
3,4:Drain
Note:
JEDEC
鈳?/div>
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
鈳?/div>
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-1M1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 1.1 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
2
(25.4 mm
脳
25.4 mm
脳
1.6 t, Cu Pad: 645 mm )
Marking (top view)
Electrode Layout (bottom view)
Equivalent Circuit (top view)
4
3
4
3
3
4
1
2
2
1
1
Polarity marking
1
2
3
4
Gate
Source
Drain
Drain
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
1
2007-11-01
0.075鹵0.04
Absolute Maximum Ratings
(Ta
=
25擄C)
SA
2

SSM4K27CT 產(chǎn)品屬性

  • Toshiba

  • MOSFET

  • N-Channel

  • 20 V

  • +/- 12 V

  • 0.5 A

  • Single

  • + 150 C

  • SMD/SMT

  • ES-6-4

  • - 55 C

  • 400 mW

  • 10000

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