18m鈩?/div>
8.2A
I
D
SO-8
S1
G1
Description
D1
D2
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
S1
G2
S2
This device is available with Pb-free lead finish (second-level interconnect) as SSM4226GM.
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
=25擄C
I
D
@ T
A
=70擄C
I
DM
P
D
@ T
A
=25擄C
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
鹵 20
8.2
6.7
30
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/擄C
擄C
擄C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
62.5
Unit
擄C/W
8/06/2004 Rev.1.02
www.SiliconStandard.com
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