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SSM40N03P Datasheet

  • SSM40N03P

  • N CHANNEL ENHANCEMENT MODE POWER MOSFET

  • 6頁

  • ETC

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SSM40N03P
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate charge
Simple drive requirement
Fast switching
G
D
S
BV
DSS
R
DS(ON)
I
D
TO-220
30V
17m鈩?/div>
40A
Description
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial and
industrial applications and suited for low voltage applications such as
DC/DC converters and high efficiency switching circuits.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
=25擄C
I
D
@ T
C
=100擄C
I
DM
P
D
@ T
C
=25擄C
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
鹵
20
40
30
169
50
0.4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/擄C
擄C
擄C
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.5
62
Unit
擄C/W
擄C/W
Rev.2.01 7/01/2004
www.SiliconStandard.com
1 of 6

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