鈥?/div>
Small package
Low ON resistance
: R
on
=
3.3
惟
(max) (@V
GS
=
4.5 V)
: R
on
=
3.2
惟
(max) (@V
GS
=
5 V)
: R
on
=
3.0
惟
(max) (@V
GS
=
10 V)
0.65 0.65
1.3 鹵 0.1
2.0 鹵 0.2
2.1鹵 0.1
1.25 鹵 0.1
+0.1
0.3 - 0
Unit: mm
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
60
鹵
20
200
800
150
150
鈭?5~150
Unit
V
V
1
2
3
Channel temperature
Storage temperature range
擄C
擄C
1. GATE
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: mounted on FR4 board
2
(25.4 mm
脳
25.4 mm
脳
1.6 t, Cu Pad: 0.6mm
脳
3)
0.6 mm
1.0 mm
Note:
USM
JEDEC
JEITA
TOSHIBA
2. SOURCE
3. DRAIN
SC-70
2-2E1E
Marking
3
Equivalent Circuit
(top view)
3
NC
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01
0~0.1
Drain power dissipation (Ta
=
25擄C)
mW
0.7
mA
0.9 鹵 0.1
next
1
2
3
4
5
