鈥?/div>
1.8V drive
Low on-resistance : R
on
= 47m鈩?(max.) (@V
GS
= 1.8V)
: R
on
= 35m鈩?(max.) (@V
GS
= 2.5V)
: R
on
= 31m鈩?(max.) (@V
GS
= 4.0V)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristic
Drain鈥搒ource voltage
Gate鈥搒ource voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
20
鹵12
4.7
9.4
700
150
鈭?5~150
Unit
V
V
A
mW
擄C
擄C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm
脳
25.4 mm
脳
1.6 t, Cu Pad: 645 mm
2
)
JEDEC
JEITA
TOSHIBA
Weight:
鈥?/div>
鈥?/div>
2-3S1A
10mg (typ.)
Electrical Characteristics
(Ta
=
25擄C)
Characteristic
Drain鈥搒ource breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
|Y
fs
|
R
DS (ON)
C
iss
C
oss
C
rss
t
on
t
off
V
DSF
Turn-on time
Turn-off time
Test Condition
I
D
=
1 mA, V
GS
=
0
I
D
=
1 mA, V
GS
=
-12 V
V
DS
=20
V, V
GS
=
0
V
GS
= 鹵12
V, V
DS
=
0
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
3 V, I
D
=
4.0A
I
D
=
4.0 A, V
GS
=
4.0 V
Drain鈥搒ource ON-resistance
I
D
=
3.0 A, V
GS
=
2.5 V
I
D
=
1.0 A, V
GS
=
1.8 V
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
(Note2)
(Note2)
(Note2)
(Note2)
Min
20
12
鈳?/div>
鈳?/div>
0.35
13
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
(Note2)
鈳?/div>
Typ.
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
25
22
25
30
1020
175
160
23
34
-0.85
Max
鈳?/div>
鈳?/div>
1
鹵1
1.0
鈳?/div>
31
35
47
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
-1.2
pF
pF
pF
ns
V
m惟
Unit
V
渭A
渭A
V
S
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DD
=
10 V, I
D
=
2A
V
GS
=
0~2.5 V, R
G
=
4.7
惟
I
D
=
-4.7 A, V
GS
=
0
Drain鈥搒ource forward voltage
Note2: Pulse test
1
2007-11-01
SSM3K309T相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
High Speed Switching Applications
TOSHIBA
-
英文版
High Speed Switching Applications
TOSHIBA [T...
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA [T...
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA [T...
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA [T...
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...
TOSHIBA
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...
TOSHIBA [T...
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...
TOSHIBA
-
英文版
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...
TOSHIBA [T...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 1.3A I(D) |...
ETC
-
英文版
HIGH SPEED SWITCHING APPLICATIONS
Toshiba
-
英文版
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
TOSHIBA
-
英文版
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
TOSHIBA [T...
-
英文版
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
TOSHIBA
-
英文版
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
TOSHIBA [T...
-
英文版
High Speed Switching Applications
TOSHIBA
-
英文版
Toshiba
1
2
3
4
5
