鈥?/div>
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-3S1A
absolute maximum ratings.
Weight: 10 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
2
(25.4 mm
脳
25.4 mm
脳
1.6 t, Cu Pad: 645 mm )
Note:
Electrical Characteristics
(Ta = 25擄C)
Characteristic
Drain鈥搒ource breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain鈥搒ource ON-resistance
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
鈴怸
fs
鈴?/div>
R
DS (ON)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Turn-on time
Turn-off time
t
on
t
off
V
DSF
V
DS
= 15 V, I
DS
= 3.0 A
V
GS
= 4 V
V
DD
=
10 V, I
D
=
2 A,
V
GS
=
0 to 2.5 V, R
G
=
4.7
惟
I
D
= 鈭?/div>
3.0 A, V
GS
=
0 V
(Note2)
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
Test Condition
I
D
=
1 mA, V
GS
=
0
I
D
=
1 mA, V
GS
=
鈥?2 V
V
DS
=
30 V, V
GS
=
0
V
GS
= 鹵
12 V, V
DS
=
0
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
3 V, I
D
=
2 A
I
D
=
2.0 A, V
GS
=
4.0 V
I
D
=
1.0 A, V
GS
=
2.5 V
I
D
=
0.5 A, V
GS
=
1.8 V
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
(Note2)
(Note2)
(Note2)
(Note2)
Min
30
18
鈳?/div>
鈳?/div>
0.4
3.8
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
Typ.
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
7.7
52
64
81
270
56
47
4.3
2.8
1.5
20
31
鈥?0.85
Max
鈳?/div>
鈳?/div>
1
鹵1
1.0
鈳?/div>
71
87
131
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈥?1.2
ns
V
nC
pF
m惟
Unit
V
V
渭A
渭A
V
S
Drain鈥搒ource forward voltage
Note2: Pulse test
1
2007-11-01
SSM3K302T相關(guān)型號(hào)PDF文件下載
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