音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

SSM3K301T Datasheet

  • SSM3K301T

  • Silicon N-Channel MOS Type Power Management Switch Applicati...

  • 6頁

  • TOSHIBA

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

SSM3K301T
TOSHIBA Field Effect Transistor
Silicon N-Channel MOS Type
SSM3K301T
Power Management Switch Applications
High-Speed Switching Applications
鈥?/div>
鈥?/div>
1.8 V drive
Low ON-resistance:
R
on
= 110 m鈩?(max) (@V
GS
= 1.8 V)
R
on
= 74 m鈩?(max) (@V
GS
= 2.5 V)
R
on
= 56 m鈩?(max) (@V
GS
= 4.0 V)
Unit: mm
Unit: mm
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
T
ch
T
stg
Rating
20
12
3.5
7.0
700
150
鈭?5~150
Unit
V
V
A
mW
擄C
擄C
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm
25.4 mm
1.6 t, Cu Pad: 645 mm
2
)
Note:
JEDEC
JEITA
TOSHIBA
Weight: 10 mg (typ.)
鈥?/div>
鈥?/div>
2-3S1A
Electrical Characteristics
(Ta = 25擄C)
Characteristics
Drain-Source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
鈴怸
fs
鈴?/div>
R
DS (ON)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
on
t
off
V
DSF
V
DS
= 10 V, I
DS
= 3.5 A
V
GS
= 4 V
V
DD
=
10 V, I
D
=
2 A,
V
GS
=
0~2.5 V, R
G
=
4.7
I
D
= 鈭?.5
A, V
GS
=
0 V
(Note 2)
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
Test Condition
I
D
=
1 mA, V
GS
=
0
I
D
=
1 mA, V
GS
= 鈭?2
V
V
DS
=
20 V, V
GS
=
0
V
GS
= 鹵12
V, V
DS
=
0
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
3 V, I
D
=
2.0 A
I
D
=
2.0 A, V
GS
=
4.0 V
I
D
=
1.0 A, V
GS
=
2.5 V
I
D
=
0.5 A, V
GS
=
1.8 V
(Note 2)
(Note 2)
(Note 2)
(Note 2)
Min
20
12
鈳?/div>
鈳?/div>
0.4
6
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
Typ.
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
10
44
53
70
320
62
51
4.8
3.3
1.5
18
14
鈭?.85
Max
鈳?/div>
鈳?/div>
1
鹵1
1.0
鈳?/div>
56
74
110
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
ns
V
nC
pF
m惟
Unit
V
渭A
渭A
V
S
Drain-Source forward voltage
鈭?/div>
1.2
Note 2: Pulse test
1
2007-11-01

SSM3K301T相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    High Speed Switching Applications
    TOSHIBA
  • 英文版
    High Speed Switching Applications
    TOSHIBA [T...
  • 英文版
    TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
    TOSHIBA
  • 英文版
    TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
    TOSHIBA [T...
  • 英文版
    TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
    TOSHIBA
  • 英文版
    TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
    TOSHIBA [T...
  • 英文版
    TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
    TOSHIBA
  • 英文版
    TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
    TOSHIBA [T...
  • 英文版
    TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...
    TOSHIBA
  • 英文版
    TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...
    TOSHIBA [T...
  • 英文版
    TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...
    TOSHIBA
  • 英文版
    TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...
    TOSHIBA [T...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 1.3A I(D) |...
    ETC
  • 英文版
    HIGH SPEED SWITCHING APPLICATIONS
    Toshiba
  • 英文版
    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
    TOSHIBA
  • 英文版
    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
    TOSHIBA [T...
  • 英文版
    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
    TOSHIBA
  • 英文版
    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
    TOSHIBA [T...
  • 英文版
    High Speed Switching Applications
    TOSHIBA
  • 英文版
    Toshiba

掃碼下載APP,
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù):
賣家服務(wù):
技術(shù)客服:

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時間周一至周五
9:00-17:30

關(guān)注官方微信號,
第一時間獲取資訊。

建議反饋

聯(lián)系人:

聯(lián)系方式:

按住滑塊,拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見,您的參與是維庫提升服務(wù)的動力!意見一經(jīng)采納,將有感恩紅包奉上哦!