SSM3K17FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K17FU
High Speed Switching Applications
Analog Switch Applications
路
路
路
Suitable for high-density mounting due to compact package
High drain-source voltage
High speed switching
Unit: mm
Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note)
T
ch
T
stg
Rating
50
鹵7
100
200
150
150
鈭?5~150
Unit
V
V
mA
mW
擄C
擄C
Drain power dissipation (Ta = 25擄C)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-70
2-2E1E
Note: Mounted on FR4 board
2
(25.4 mm 脳 25.4 mm 脳 1.6 t, Cu Pad: 0.6 mm 脳 3)
Weight: 6 mg (typ.)
0.6 mm
1.0 mm
Marking
3
Equivalent Circuit
3
DM
1
2
1
2
This transistor is a electrostatic sensitive device. Please handle with caution.
1
2002-04-09
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