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SSM3K15TE Datasheet

  • SSM3K15TE

  • High Speed Switching Applications

  • 5頁(yè)

  • TOSHIBA

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SSM3K15TE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15TE
High Speed Switching Applications
Analog Switch Applications
1.2鹵0.05
0.32鹵0.05
錛?/div>
0.14鹵0.05
0.8鹵0.05
Unit: mm
鈥?/div>
鈥?/div>
Small package
0.45 0.45
1.4鹵0.05
0.9鹵0.1
Low on resistance
: R
on
= 4.0
鈩?/div>
(max) (@V
GS
= 4 V)
: R
on
= 7.0
鈩?/div>
(max) (@V
GS
= 2.5 V)
錛?/div>
錛?/div>
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
30
鹵20
100
200
100
150
鈭?5~150
Unit
V
V
mA
mW
擄C
擄C
0.59鹵0.05
Absolute Maximum Ratings
(Ta
=
25擄C)
TESM
JEDEC
JEITA
1. Gate
2. Source
3. Drain
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature
-
-
Note:
TOSHIBA
2-1B1B
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
Weight: 0.0022 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
3
Equivalent Circuit
3
DP
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01

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