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SSM3K15FU Datasheet

  • SSM3K15FU

  • High Speed Switching Applications Analog Switch Applications

  • 6頁

  • TOSHIBA

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SSM3K15FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15FU
High Speed Switching Applications
Analog Switch Applications
Small package
Low on resistance
: R
on
= 4.0
鈩?/div>
(max) (@V
GS
= 4 V)
: R
on
= 7.0
鈩?/div>
(max) (@V
GS
= 2.5 V)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note)
T
ch
T
stg
Rating
30
鹵20
100
200
150
150
-55~150
Unit
V
V
mA
mW
擄C
擄C
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-70
2-2E1E
Note: Mounted on FR4 board
2
(25.4 mm
25.4 mm
1.6 t, Cu Pad: 0.6 mm
3)
Weight: 0.006 g (typ.)
0.6 mm
1.0 mm
Marking
3
Equivalent Circuit
3
DP
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2002-04-01

SSM3K15FU相關(guān)型號PDF文件下載

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    TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
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    TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 1.3A I(D) |...
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  • 英文版
    HIGH SPEED SWITCHING APPLICATIONS
    Toshiba
  • 英文版
    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
    TOSHIBA
  • 英文版
    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
    TOSHIBA [T...
  • 英文版
    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
    TOSHIBA
  • 英文版
    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
    TOSHIBA [T...
  • 英文版
    High Speed Switching Applications
    TOSHIBA
  • 英文版
    Toshiba

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