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SSM3K15FS_07 Datasheet

  • SSM3K15FS_07

  • Silicon N Channel MOS Type High Speed Switching Applications

  • 5頁(yè)

  • TOSHIBA

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SSM3K15FS
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type
SSM3K15FS
High Speed Switching Applications
Analog Switching Applications
鈥?/div>
鈥?/div>
Compact package suitable for high-density mounting
Low ON-resistance
: R
on
= 4.0
鈩?/div>
(max) (@V
GS
= 4 V)
: R
on
= 7.0
鈩?/div>
(max) (@V
GS
= 2.5 V)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
30
鹵20
100
200
100
150
鈭?5~150
Unit
V
V
mA
mW
擄C
擄C
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature range
JEDEC
鈥?/div>
Note:
JEITA
鈥?/div>
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-2H1B
temperature, etc.) may cause this product to decrease in the
Weight: 2.4 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
3
Equivalent Circuit
3
DP
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01

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