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SSM3K15CT Datasheet

  • SSM3K15CT

  • High-Speed Switching Applications

  • 153.61KB

  • 5頁(yè)

  • TOSHIBA

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SSM3K15CT
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K15CT
High-Speed Switching Applications
Analog Switch Applications
鈥?/div>
鈥?/div>
Optimum for high-density mounting in small packages
: R
on
= 4.0
鈩?/div>
(max) (@V
GS
= 4 V)
1.0鹵0.05
0.25鹵0.03
0.6鹵0.05
0.5鹵0.03
Unit: mm
Low ON-resistance
: R
on
= 7.0
鈩?/div>
(max) (@V
GS
= 2.5 V)
錛?/div>
0.65鹵0.02
錛?/div>
0.25鹵0.03
錛?/div>
0.35鹵0.02
0.15鹵0.03
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
30
鹵20
100
200
100
150
鈭?5~150
Unit
V
V
mA
mW
擄C
擄C
0.05鹵0.03
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature
CST3
JEDEC
Using continuously under heavy loads (e.g. the application of
JEITA
-
high temperature/current/voltage and the significant change in
TOSHIBA
2-1J1B
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.75 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
2
(10 mm
脳
10 mm
脳
1.0 t, Cu Pad: 100 mm )
Note:
Marking (Top View)
Polarity mark
Pin Condition (Top View)
Polarity mark (on the top)
Equivalent Circuit
3
SB
1
3
2
1. Gate
2. Source
3. Drain
1
2
*
Electrodes: On the bottom
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, ensure that the environment is protected
against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
1
2007-11-01
0.38 +0.02
-0.03
0.05鹵0.03
-

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