鈥?/div>
2.5V drive
Low on-resistance:
Unit: mm
R
on
= 135m鈩?(max) (@V
GS
= 2.5 V)
R
on
= 100m鈩?(max) (@V
GS
= 4.5 V)
0.65鹵0.05
2.1鹵0.1
1.7鹵0.1
+0.1
0.3 -0.05
3
0.166鹵0.05
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
P
D (Note 2)
T
ch
T
stg
Rating
30
鹵
12
2.2
4.4
800
500
150
鈭?5~150
Unit
V
V
A
mW
擄C
擄C
2.0鹵0.1
1
2
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on ceramic board.
2
(25.4 mm
脳
25.4 mm
脳
0.8 mm, Cu Pad: 645 mm )
Note 2: Mounted on FR4 board.
(25.4 mm
脳
25.4 mm
脳
1.6 mm, Cu Pad: 645 mm
2
)
Note:
UFM
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-2U1A
Weight: 6.6 mg (typ.)
Electrical Characteristics
(Ta = 25擄C)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
鈴怸
fs
鈴?/div>
R
DS (ON)
C
iss
C
oss
C
rss
t
on
t
off
V
DSF
Test Conditions
I
D
=
1 mA, V
GS
=
0
I
D
=
1 mA, V
GS
= 鈭?2
V
V
DS
=
30 V, V
GS
=
0
V
GS
= 鹵12V,
V
DS
=
0
V
DS
=
3 V, I
D
=
0.1 mA
V
DS
=
3 V, I
D
=
0.25 A
I
D
=
0.5 A, V
GS
=
4.5 V
I
D
=
0.25 A, V
GS
=
2.5 V
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DD
=
10 V, I
D
=
0.25 A,
V
GS
=
0~2.5 V, R
G
=
4.7
惟
I
D
= 鈭?.2A,
V
GS
=
0 V
(Note3)
(Note3)
(Note3)
(Note3)
Min
30
18
鈳?/div>
鈳?/div>
0.5
1
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
Typ.
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
2
75
95
245
41
33
9
15
鈭?.83
Max
鈳?/div>
鈳?/div>
1
鹵1
1.1
鈳?/div>
100
135
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
-1.2
Unit
V
渭A
渭A
V
S
m惟
pF
pF
pF
ns
V
Drain-Source forward voltage
Note3: Pulse test
0.7鹵0.05
1: Gate
2: Source
3: Drain
1
2007-11-01
SSM3K116TU 產(chǎn)品屬性
245 pF V @ 10
表面貼裝
1.7mm
UFM
2 x 1.7 x 0.7mm
3
-55 °C
800 mW
±12 V
30 V
0.1
2.2 A
+150 °C
1
小信號(hào)
增強(qiáng)
N
單
2mm
0.7mm
SSM3K116TU相關(guān)型號(hào)PDF文件下載
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