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SSM3K09FU Datasheet

  • SSM3K09FU

  • High Speed Switching Applications

  • 5頁(yè)

  • TOSHIBA

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SSM3K09FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K09FU
High Speed Switching Applications
路
路
Small package
Low on resistance
: R
on
= 0.7
鈩?/div>
(max) (@V
GS
=
10
V)
: R
on
=
1.2 鈩?/div>
(max) (@V
GS
= 4 V)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note1)
T
ch
T
stg
Rating
30
鹵20
400
800
150
150
-55~150
Unit
V
V
mA
mW
擄C
擄C
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature
JEDEC
JEITA
鈥?/div>
SC-70
2-2E1E
Note1: Mounted on FR4 board
2
(25.4 mm
麓
25.4 mm
麓
1.6 t, Cu Pad: 0.6 mm
麓
3)
Figure 1.
TOSHIBA
Weight: 0.006 g (typ.)
Marking
3
Equivalent Circuit
(top view)
3
Figure 1:
25.4 mm
麓
25.4 mm
麓
1.6 t,
Cu Pad: 0.6 mm
2
麓
3
0.6 mm
1.0 mm
DJ
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2002-01-24

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