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SSM3K05FU_07 Datasheet

  • SSM3K05FU_07

  • High Speed Switching Applications

  • 609.73KB

  • 5頁

  • TOSHIBA

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SSM3K05FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K05FU
High Speed Switching Applications
鈥?/div>
鈥?/div>
鈥?/div>
Small package
Low on resistance : R
on
= 0.8
鈩?/div>
max (@V
GS
= 4 V)
: R
on
= 1.2
鈩?/div>
max (@V
GS
= 2.5 V)
Low gate threshold voltage
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
20
鹵12
400
800
150
150
鈭?5~150
Unit
V
V
mA
mW
擄C
擄C
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature range
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm
脳
25.4 mm
脳
1.6 t, Cu pad: 0.6 mm
2
脳
3)
Note:
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-70
2-2E1E
Weight: 0.006 g (typ.)
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01

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