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SSM3K04FE Datasheet

  • SSM3K04FE

  • HIGH SPEED SWITCH APPLICATIONS

  • Toshiba

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SSM3K04FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K04FE
High Speed Switching Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
With built-in gate-source resistor: R
GS
= 1 M鈩?(typ.)
2.5 V gate drive
Low gate threshold voltage: V
th
= 0.7~1.3 V
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
GSS
I
D
P
D
T
ch
T
stg
Rating
20
10
100
100
150
鈭?5~150
Unit
V
V
mA
mW
擄C
擄C
JEDEC
鈥?/div>
Note:
JEITA
鈥?/div>
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-2HA1B
temperature, etc.) may cause this product to decrease in the
Weight: 2.3 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Equivalent Circuit
1
2007-11-01

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