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SSM3K03FV Datasheet

  • SSM3K03FV

  • High Speed Switching Applications

  • 5頁

  • TOSHIBA

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SSM3K03FV
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K03FV
High Speed Switching Applications
Analog Switch Applications
0.22鹵0.05
1.2鹵0.05
0.8鹵0.05
0.32鹵0.05
3
2
0.13鹵0.05
Unit: mm
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.5 V gate drive
1.2鹵0.05
0.8鹵0.05
High input impedance
Low gate threshold voltage: V
th
= 0.7~1.3 V
Optimum for high-density mounting in small packages
0.4
1
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature range
Symbol
V
DS
V
GSS
I
D
P
D
(Note 1)
T
ch
T
stg
Rating
20
10
100
150
150
鈭?5~150
Unit
V
V
mA
mW
擄C
擄C
0.5鹵0.05
0.4
1.Gate
2.Source
3.Drain
VESM
JEDEC
鈥?/div>
Note:
JEITA
鈥?/div>
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-2L1B
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.5 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
0.5mm
0.45mm
0.45mm
0.4mm
Marking
3
Equivalent Circuit
120
3
DA
1
2
1
2
1
2007-11-01

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