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SSM3K02F Datasheet

  • SSM3K02F

  • TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

  • 5頁(yè)

  • TOSHIBA

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SSM3K02F
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K02F
High Speed Switching Applications
路
路
路
Small package
Low on resistance: R
on
= 200 m鈩?(max) (V
GS
= 4 V)
: R
on
= 250 m鈩?(max) (V
GS
= 2.5 V)
Low gate threshold voltage: V
th
= 0.6~1.1 V (V
DS
= 3 V, I
D
= 0.1 mA)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Gate-source voltage
DC
Drain current
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
30
鹵10
1.0
A
2.0
200
150
-55~150
mW
擄C
擄C
Unit
V
V
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1F
Weight: 0.012 g (typ.)
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2003-03-27

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