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SSM3K01T Datasheet

  • SSM3K01T

  • TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

  • 5頁

  • TOSHIBA

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SSM3K01T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01T
High Speed Switching Applications
路
路
路
Small Package
Low on Resistance : R
on
= 120 m鈩?(max) (@V
GS
= 4 V)
: R
on
= 150 m鈩?(max) (@V
GS
= 2.5 V)
Low Gate Threshold Voltage: V
th
= 0.6~1.1 V
(@V
DS
= 3 V, I
D
= 0.1 mA)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristic
Drain-Source voltage
Gate-Source voltage
DC
Drain current
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
(Note2)
P
D
(Note1)
T
ch
T
stg
Rating
30
鹵10
3.2
6.4
1250
150
-55~150
2
A
Unit
V
V
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature range
mW
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-3S1A
Note1: Mounted on FR4 board
(25.4 mm
麓
25.4 mm
麓
1.6 t, Cu pad: 645 mm , t
=
10 s)
Note2: The pulse width limited by max channel temperature.
Weight: 10 mg (typ.)
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R
th (ch-a)
and the drain power dissipation P
D
vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
1
2002-01-24

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