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SSM3K01T_07 Datasheet

  • SSM3K01T_07

  • High Speed Switching Applications

  • 5頁

  • TOSHIBA

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SSM3K01T
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type
SSM3K01T
High Speed Switching Applications
鈥?/div>
鈥?/div>
鈥?/div>
Small Package
Low on Resistance : R
on
= 120 m鈩?(max) (@V
GS
= 4 V)
: R
on
= 150 m鈩?(max) (@V
GS
= 2.5 V)
Low Gate Threshold Voltage: V
th
= 0.6~1.1 V
(@V
DS
= 3 V, I
D
= 0.1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristic
Drain-Source voltage
Gate-Source voltage
DC
Drain current
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
(Note 2)
P
D
(Note 1)
T
ch
T
stg
Rating
30
鹵10
3.2
6.4
1250
150
鈭?5~150
A
Unit
V
V
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature range
mW
擄C
擄C
JEDEC
鈥?/div>
Note:
JEITA
鈥?/div>
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-3S1A
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 10 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2
Note 1: Mounted on FR4 board
(25.4 mm
脳
25.4 mm
脳
1.6 t, Cu pad: 645 mm , t
=
10 s)
Note 2: The pulse width limited by max channel temperature.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R
th (ch-a)
and the drain power dissipation P
D
vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
1
2007-11-01

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