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SSM3J14T Datasheet

  • SSM3J14T

  • TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...

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  • TOSHIBA

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SSM3J14T
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM3J14T
Power Management Switch
DC-DC Converters
路
路
路
Suitable for high-density mounting due to compact package
Low on Resistance : R
on
= 145 m鈩?(max) (@V
GS
=
鈭?.5
V)
: R
on
= 85 m鈩?(max) (@V
GS
=
鈭?0
V)
High-speed switching
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-Source voltage
Gate-Source voltage
DC
Drain current
Pulse
P
D
Symbol
V
DS
V
GSS
I
D
I
DP
(Note 2)
t
=
10 s
(Note 1)
T
ch
T
stg
Rating
-30
鹵20
-2.7
-5.4
1.25
0.7
150
-55
to 150
A
Unit
V
V
Drain power dissipation
Channel temperature
Storage temperature range
W
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-3S1A
Note 1: Mounted on FR4 board
2
(25.4 mm
麓
25.4 mm
麓
1.6 t, Cu pad: 645 mm )
Note 2: The pulse width limited by maximum channel temperature.
Weight: 10 mg (typ.)
Marking
3
Equivalent Circuit
3
KDL
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R
th (ch-a)
and the drain power dissipation P
D
vary according to the
board material, board area, board thickness and pad area, and are also affected by the environment in which the
product is used. When using this device, please take heat dissipation fully into account
1
2002-04-17

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