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SSM3J09FU Datasheet

  • SSM3J09FU

  • TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

  • 5頁

  • TOSHIBA

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SSM3J09FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J09FU
Management Switch
High Speed Switching Applications
Small package
Low on resistance: R
on
= 2.7
鈩?/div>
(max) (@V
GS
=
鈭?0
V)
: R
on
= 4.2
鈩?/div>
(max) (@V
GS
=
鈭?
V)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note1)
T
ch
T
stg
Rating
-30
鹵20
-200
-400
150
150
-55~150
Unit
V
V
mA
mW
擄C
擄C
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature
JEDEC
JEITA
鈥?/div>
SC-70
2-2E1E
Note 1: Mounted on FR4 board
2
(25.4 mm
25.4 mm
1.6 t, Cu Pad: 0.6 mm
3)
Figure 1.
TOSHIBA
Weight: 0.006 g (typ.)
Marking
3
Equivalent Circuit
(top view)
3
Figure 1: 25.4 mm
25.4 mm
1.6 t,
Cu Pad: 0.6 mm
2
3
0.6 mm
DK
1.0 mm
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2002-01-16

SSM3J09FU相關(guān)型號PDF文件下載

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    High Speed Switching Applications
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    TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
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    Toshiba

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