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SSM3J02T Datasheet

  • SSM3J02T

  • TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

  • 141.70KB

  • 5頁(yè)

  • TOSHIBA

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SSM3J02T
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J02T
Power Management Switch
High Speed Switching Applications
路
路
路
路
Component package suitable for high-density mounting
Small Package
Low ON Resistance : R
on
= 0.5
鈩?/div>
(max) (@V
GS
=
鈭?
V)
: R
on
= 0.7
鈩?/div>
(max) (@V
GS
=
鈭?.5
V)
Low-voltage operation possible
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristic
Drain-Source voltage
Gate-Source voltage
DC
Drain current
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
(Note2)
P
D
(Note1)
T
ch
T
stg
Rating
-30
鹵10
-1.5
-3.0
1250
150
-55
to 150
A
Unit
V
V
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature range
mW
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-3S1A
Note1:
Mounted on FR4 board
(25.4 mm
麓
25.4 mm
麓
1.6 t, Cu pad: 645 mm2, t
=
10 s)
Weight: 10 mg (typ.)
Note2:
The pulse width limited by max channel temperature.
Marking
3
Equivalent Circuit
3
DD
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2002-01-17

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    High Speed Switching Applications
    TOSHIBA
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    High Speed Switching Applications
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