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SSM25G45EM Datasheet

  • SSM25G45EM

  • N-CHANNEL INSULATED-GATE BOPOLAR TRANSISTOR

  • 4頁(yè)

  • ETC

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SSM25G45EM
N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
High input impedance
High peak current capability
C
C
C
C
V
CE
I
CP
450V
150A
C
4.5V gate drive
G
SO-8
E
E
E
G
E
Absolute Maximum Ratings
Symbol
V
CE
V
GE
V
GEP
I
CP
P
D
@ T
C
=25擄C
T
STG
T
J
1
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
450
鹵6
鹵8
150
2.5
-55 to 150
-55 to 150
Units
V
V
V
A
W
擄C
擄C
Electrical Characteristics @ T
j
=25
o
C (unless otherwise specified)
Symbol
I
GES
I
CES
V
CE(sat)
V
GE(th)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
Rth
JA1
Parameter
Gate-Emitter Leakage Current
Collector-Emitter Leakage Current (Tj=25擄C)
Test Conditions
V
GE
=鹵 6V, V
CE
=0V
V
CE
=450V, V
GE
=0V
V
GE
=4.5V, I
CP
=150A (Pulsed)
Min.
-
-
-
0.35
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
6
-
64.5
7
30
11.5
24.5
150
3.3
2227
200
79
-
Max.
10
10
8
1.2
-
-
-
-
-
-
-
-
-
-
50
Units
碌A(chǔ)
碌A(chǔ)
V
V
nC
nC
nC
ns
ns
ns
碌s
pF
pF
pF
擄C/W
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
=V
GE
, I
C
=250uA
I
C
=50A
V
CE
=360V
V
GE
=5V
V
CC
=225V
I
C
=50A
R
G
=25鈩?/div>
V
GE
=5V
V
GE
=0V
V
CE
=25V
f=1.0MHz
Thermal Resistance Junction-Ambient
Notes:
1.Surface mounted on 1 in
2
copper pad of FR4 board ; 125擄C/W when mounted on min. copper pad.
9/21/2004 Rev.2.01
www.SiliconStandard.com
1 of 4

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