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SSM02N60P Datasheet

  • SSM02N60P

  • N CHANNEL ENHANCEMENT MODE

  • 6頁

  • ETC

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SSM02N60P
N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
Repetitive-avalanche rated
Fast-switching
Simple drive requirement
G
D
BV
DSS
R
DS(ON)
I
D
TO-220
600V
8惟
2A
Description
S
The TO-220 package is
widely
preferred for commercial
and industrial
applications. The SSM02N60P is well suited for DC/DC and
AC/DC
converters in telecom, industrial and consumer applications.
G
D
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25鈩?/div>
I
D
@T
C
=100鈩?/div>
I
DM
P
D
@T
C
=25鈩?/div>
E
AS
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
2
Rating
600
鹵
20
2
1.26
6
39
0.31
130
2
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/鈩?/div>
mJ
A
mJ
鈩?/div>
鈩?/div>
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.2
62
Unit
鈩?W
鈩?W
Rev.2.01 6/06/2003
www.SiliconStandard.com
1 of 6

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