音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

SSI7N60A Datasheet

  • SSI7N60A

  • TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7A I(D) | ...

  • 366.90KB

  • 7頁

  • ETC

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
碌
A (Max.) @ V
DS
= 600V
Lower R
DS(ON)
: 0.977
鈩?/div>
(Typ.)
SSW/I7N60A
BV
DSS
= 600 V
R
DS(on)
= 1.2
鈩?/div>
I
D
= 7 A
D
2
-PAK
2
I
2
-PAK
1
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25 C) *
Total Power Dissipation (T
C
=25
o
C)
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from case for 5-seconds
o
2
O
1
O
1
O
3
O
o
o
Value
600
7
4.4
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/
C
o
28
+ 30
_
535
7
14.7
3.0
3.1
147
1.18
- 55 to +150
o
C
300
Thermal Resistance
Symbol
R
胃
JC
R
胃
JA
R
胃
JA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
0.85
40
62.5
o
Units
C/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
漏1999 Fairchild Semiconductor Corporation

SSI7N60A相關(guān)型號PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時間周一至周五
9:00-17:30

關(guān)注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務(wù)的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！