Advanced Power MOSFET
FEATURES
!
Avalanche Rugged Technology
!
Rugged Gate Oxide Technology
!
Lower Input Capacitance
!
Improved Gate Charge
!
Extended Safe Operating Area
!
Lower Leakage Current : 25
渭A
(Max.) @ V
DS
= 600V
!
Lower R
DS(ON)
: 1.81惟 (Typ.)
SSW/I5N60A
BV
DSS
= 600 V
R
DS(on)
= 2.2惟
I
D
= 4.5 A
D
2
-PAK
2
I
2
-PAK
1
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25鈩?
Continuous Drain Current (T
C
=100鈩?
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25鈩?
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from case for 5-seconds
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
Value
600
4.5
2.8
18
鹵30
331
4.5
11
3.0
110
0.88
- 55 to +150
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/鈩?/div>
鈩?/div>
300
Thermal Resistance
Symbol
R
胃JC
R
胃JA
R
胃JA
Characteristic
Junction-to-Case
Case-to-Sink *
Junction-to-Ambient
Typ.
--
--
--
Max.
1.14
40
62.5
鈩?W
Units
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. A
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SSI5N60A相關(guān)型號PDF文件下載
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 50A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 4.5A I(D) ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 5A I(D) | ...
ETC