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SSH7N90A Datasheet

  • SSH7N90A

  • N-CHANNEL POWER MOSFET

  • 247.99KB

  • 8頁

  • FAIRCHILD

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N-CHANNEL POWER MOSFET
SSH7N90A
FEATURES
BV
DSS
= 900V
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 25碌A (Max.) @ V
DS
= 900V
Lower R
DS(ON)
: 1.247鈩?(Typ.)
1
2
3
R
DS(ON)
= 1.8鈩?/div>
I
D
= 7A
TO-3P
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristics
Drain-to-Source Voltage
Continuous Drain Current (T
C
= 25擄C)
Continuous Drain Current (T
C
= 100擄C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
= 25擄C)
Linear Derating Factor
Operating Junction and Storage
Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from case for 5-seconds
y
x
x
z
x
Value
900
7
4.4
28
鹵30
778
7
24
1.5
240
1.92
鈭?5
to +150
1. Gate 2. Drain 3. Source
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
300
THERMAL RESISTANCE
Symbol
R
胃JC
R
胃CS
R
胃JA
Characteristics
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
鈭?/div>
0.24
鈭?/div>
Max.
0.52
鈭?/div>
40
擄C/W
Units
REV. B
1
錚?/div>
1999 Fairchild Semiconductor Corporation

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