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SSH25N40A Datasheet

  • SSH25N40A

  • TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 25A I(D) |...

  • 7頁

  • ETC

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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10
碌
A (Max.) @ V
DS
= 400V
Low R
DS(ON)
: 0.162
鈩?/div>
(Typ.)
SSH25N40A
BV
DSS
= 400 V
R
DS(on)
= 0.2
鈩?/div>
I
D
= 25 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
C
)
Continuous Drain Current (T
C
=100
C
)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
C
)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 鈥?from case for 5-seconds
螣
螣
螣
Value
400
25
15.1
1
O
2
O
1
O
1
O
3
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/
C
螣
100
+ 30
_
1429
25
27.8
4.0
278
2.22
- 55 to +150
螣
C
300
Thermal Resistance
Symbol
R
胃
JC
R
胃
CS
R
胃
JA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.45
--
40
螣
Units
C
/W
Rev. B
漏1999 Fairchild Semiconductor Corporation

SSH25N40A 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 400 V

  • +/- 30 V

  • 25 A

  • 0.2 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-3P

  • 38 ns

  • - 55 C

  • 278 W

  • 25 ns

  • 127 ns

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